10GHz SiGe design for phase and amplitude management of signal
نویسندگان
چکیده
This paper presents a core chip design in SiGe Heterojunction Bipolar Transistor base for X-band phased array Transmit/Receive (T/R) module. Usually phase shifters for X-band application were done by using of GaAs technique. Some commercial GaAs products for this type of integrate circuits are considered. The structure of the Core Chip for Phased Array T/R Modules is presented. Methods for the formation of a phase delay for X-band phase shifters are considered. An original differential design of SiGe core chip for Xband is presented. The advantages of SiGe technique is observed. The schematic of 5 bits phase shifter and attenuator are designed. It consist of a series number LPF and HPF filters. Gain of phase shifter is 1.5 dB. Attenuator has the adjustment range from 0 to 24dB. Linear output power of the core chip is 5dBm. The total consumed current of the device is 158mA, at 5V power supply. Key-Words: Core Chip, Phased Array, T/R Module, SiGe, Heterojunction Bipolar Transistor
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